MeSH Browser

MeSH Heading: Lasers, Semiconductor
Tree Number(s): E07.632.490.480; E07.710.520.480
Unique ID: D054023
RDF Unique Identifier: http://id.nlm.nih.gov/mesh/D054023
Annotation: /ther use: coordinate IM with disease /‌surg (IM), but for low-level laser therapy coordinate / ther use IM with disease /‌radiother (IM) + LOW-LEVEL LIGHT THERAPY (IM)
Scope Note: Lasers with a semiconductor diode as the active medium. Diode lasers transform electric energy to light using the same principle as a light-emitting diode (LED), but with internal reflection capability, thus forming a resonator where a stimulated light can reflect back and forth, allowing only a certain wavelength to be emitted. The emission of a given device is determined by the active compound used (e.g., gallium arsenide crystals doped with aluminum or indium). Typical wavelengths are 810, 1,060 and 1,300 nm. (From UMDNS, 2005)
Entry Term(s): Diode Lasers; GaAlAs Lasers; GaAs Lasers; Gallium Aluminum Arsenide Lasers; Gallium Arsenide Lasers; Lasers, GaAlAs; Lasers, GaAs; Lasers, Gallium Aluminum Arsenide; Lasers, Gallium Arsenide; Lasers, Quantum Cascade; Quantum Cascade Lasers; Semiconductor Diode Lasers
Previous Indexing: Lasers (1986-2007)
Public MeSH Note: 2008
History Note: 2008
Date Established: 2008/01/01
Date of Entry: 2007/07/09
Revision Date: 2018/06/29

Allowable Qualifiers: adverse effects (AE)

classification (CL)

history (HI)

standards (ST)

statistics & numerical data (SN)

supply & distribution (SD)

therapeutic use (TU)

Concept UI: M0500164
Scope Note: Lasers with a semiconductor diode as the active medium. Diode lasers transform electric energy to light using the same principle as a light-emitting diode (LED), but with internal reflection capability, thus forming a resonator where a stimulated light can reflect back and forth, allowing only a certain wavelength to be emitted. The emission of a given device is determined by the active compound used (e.g., gallium arsenide crystals doped with aluminum or indium). Typical wavelengths are 810, 1,060 and 1,300 nm. (From UMDNS, 2005)
Terms: Lasers, Semiconductor Preferred Term
Term UI T678488
Date07/24/2006
LexicalTag NON
ThesaurusID NLM (2008); Diode Lasers
Term UI T678496
Date07/24/2006
LexicalTag NON
ThesaurusID NLM (2008); Semiconductor Diode Lasers
Term UI T678497
Date07/24/2006
LexicalTag NON
ThesaurusID NLM (2008)

Concept UI: M0500165
Terms: Gallium Arsenide Lasers Preferred Term
Term UI T678498
Date07/24/2006
LexicalTag NON
ThesaurusID NLM (2008); GaAs Lasers
Term UI T678489
Date07/24/2006
LexicalTag NON
ThesaurusID NLM (2008); Lasers, Gallium Arsenide
Term UI T678523
Date07/24/2006
LexicalTag NON
ThesaurusID NLM (2008); Lasers, GaAs
Term UI T678524
Date07/24/2006
LexicalTag NON
ThesaurusID NLM (2008)

Concept UI: M0500166
Terms: Gallium Aluminum Arsenide Lasers Preferred Term
Term UI T678499
Date07/24/2006
LexicalTag NON
ThesaurusID NLM (2008); GaAlAs Lasers
Term UI T678490
Date07/24/2006
LexicalTag NON
ThesaurusID NLM (2008); Lasers, Gallium Aluminum Arsenide
Term UI T678521
Date07/24/2006
LexicalTag NON
ThesaurusID NLM (2008); Lasers, GaAlAs
Term UI T678522
Date07/24/2006
LexicalTag NON
ThesaurusID NLM (2008)

Lasers, Semiconductor MeSH Descriptor Data 2025